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Product Introduction

IPB65R660CFDAATMA1

Part Number
IPB65R660CFDAATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH TO263-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
Automotive, AEC-Q101, CoolMOS™
Quantity
9241pcs Stock Available.

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Product Specifications

Part Number IPB65R660CFDAATMA1
Description MOSFET N-CH TO263-3
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 660 mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 543pF @ 100V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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