Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQJ431EP-T1_GE3
Part Number | SQJ431EP-T1_GE3 |
Datasheet | SQJ431EP-T1_GE3 datasheet |
Description | MOSFET P-CHAN 200V SO8L |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 213 mOhm @ 1A, 4V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4355pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SO-8 |
Package / Case | PowerPAK® SO-8 |