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Product Introduction

TK31E60X,S1X

Part Number
TK31E60X,S1X
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 600V 30.8A TO-220
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
DTMOSIV-H
Quantity
2928pcs Stock Available.

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Product Specifications

Part Number TK31E60X,S1X
Datasheet TK31E60X,S1X datasheet
Description MOSFET N-CH 600V 30.8A TO-220
Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV-H
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 88 mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V
FET Feature Super Junction
Power Dissipation (Max) 230W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3

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