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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB65R310CFDAATMA1
Part Number | IPB65R310CFDAATMA1 |
Datasheet | IPB65R310CFDAATMA1 datasheet |
Description | MOSFET N-CH TO263-3 |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, CoolMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 310 mOhm @ 4.4A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 440µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1110pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 104.2W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |