Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / NP109N055PUJ-E1B-AY
Part Number | NP109N055PUJ-E1B-AY |
Datasheet | NP109N055PUJ-E1B-AY datasheet |
Description | MOSFET N-CH 55V MP-25ZP/TO-263 |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 110A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 10350pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta), 220W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |