Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / HN3C51F-GR(TE85L,F
Product Introduction
HN3C51F-GR(TE85L,F
- Part Number
- HN3C51F-GR(TE85L,F
- Manufacturer/Brand
- Toshiba Semiconductor and Storage
- Description
- TRANS 2NPN 120V 0.1A SM6
- Category
- Transistors - Bipolar (BJT) - Arrays
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 24pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | HN3C51F-GR(TE85L,F |
| Datasheet | HN3C51F-GR(TE85L,F datasheet |
| Description | TRANS 2NPN 120V 0.1A SM6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | 2 NPN (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Power - Max | 300mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | SM6 |
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