Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK6A80E,S4X

Product Introduction

TK6A80E,S4X

Part Number
TK6A80E,S4X
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 800V TO220SIS
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
π-MOSVIII
Quantity
162pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number TK6A80E,S4X
Description MOSFET N-CH 800V TO220SIS
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVIII
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack

Latest Products for Transistors - FETs, MOSFETs - Single

TK750A60F,S4X

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

R6030ENX

Rohm Semiconductor

MOSFET N-CH 600V 30A TO220

IRLIZ44GPBF

Vishay Siliconix

MOSFET N-CH 60V 30A TO220FP

2SK3046

Panasonic Electronic Components

MOSFET N-CH 500V 7A TO-220D

IPA057N06N3GXKSA1

Infineon Technologies

MOSFET N-CH 60V 60A TO220-3-31

IRFIBF30GPBF

Vishay Siliconix

MOSFET N-CH 900V 1.9A TO220FP