Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / CSD16411Q3
Part Number | CSD16411Q3 |
Datasheet | CSD16411Q3 datasheet |
Description | MOSFET N-CH 25V 56A 8-SON |
Manufacturer | Texas Instruments |
Series | NexFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V |
Vgs (Max) | +16V, -12V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 12.5V |
FET Feature | - |
Power Dissipation (Max) | 2.7W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-VSON (3.3x3.3) |
Package / Case | 8-PowerVDFN |