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| Part Number | CSD16411Q3 |
| Datasheet | CSD16411Q3 datasheet |
| Description | MOSFET N-CH 25V 56A 8-SON |
| Manufacturer | Texas Instruments |
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 56A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.8nC @ 4.5V |
| Vgs (Max) | +16V, -12V |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 12.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON (3.3x3.3) |
| Package / Case | 8-PowerVDFN |