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Part Number | PMDPB42UN,115 |
Description | MOSFET 2N-CH 20V 3.9A HUSON6 |
Manufacturer | NXP USA Inc. |
Series | - |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.9A |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 3.9A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 185pF @ 10V |
Power - Max | 510mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Supplier Device Package | DFN2020-6 |