Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / AOW12N65
Part Number | AOW12N65 |
Datasheet | AOW12N65 datasheet |
Description | MOSFET N-CH 650V 12A TO262 |
Manufacturer | Alpha & Omega Semiconductor Inc. |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 720 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2150pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 278W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |