
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1309,LF

| Part Number | RN1309,LF |
| Datasheet | RN1309,LF datasheet |
| Description | X34 PB-F USM TRANSISTOR PD 100MW |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | USM |