Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPS70R1K4P7SAKMA1
Part Number | IPS70R1K4P7SAKMA1 |
Datasheet | IPS70R1K4P7SAKMA1 datasheet |
Description | MOSFET N-CHANNEL 700V 4A TO251 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ P7 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 700V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 700mA, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 10V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 158pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 22.7W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO251-3 |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |