Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQA85N06
Part Number | FQA85N06 |
Datasheet | FQA85N06 datasheet |
Description | MOSFET N-CH 60V 100A TO-3P |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 112nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 4120pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P |
Package / Case | TO-3P-3, SC-65-3 |