
Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / IRD3CH53DB6

| Part Number | IRD3CH53DB6 |
| Datasheet | IRD3CH53DB6 datasheet |
| Description | DIODE GEN PURP 1.2KV 100A DIE |
| Manufacturer | Infineon Technologies |
| Series | - |
| Part Status | Obsolete |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 100A |
| Voltage - Forward (Vf) (Max) @ If | 2.7V @ 100A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 270ns |
| Current - Reverse Leakage @ Vr | 2µA @ 1200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -40°C ~ 150°C |