Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / FZ2400R17HP4B2BOSA2

Product Introduction

FZ2400R17HP4B2BOSA2

Part Number
FZ2400R17HP4B2BOSA2
Manufacturer/Brand
Infineon Technologies
Description
MODULE IGBT IHMB130-1
Category
Transistors - IGBTs - Modules
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
34pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number FZ2400R17HP4B2BOSA2
Datasheet FZ2400R17HP4B2BOSA2 datasheet
Description MODULE IGBT IHMB130-1
Manufacturer Infineon Technologies
Series -
Part Status Active
IGBT Type Trench Field Stop
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 4800A
Power - Max 13000W
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 2400A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 195nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

Latest Products for Transistors - IGBTs - Modules

APTGT20TL601G

Microsemi Corporation

MOD IGBT 600V 32A SP1

APTGT225A170G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG SP6

APTGT225DA170G

Microsemi Corporation

IGBT 1700V 340A 1250W SP6

APTGT225DU170G

Microsemi Corporation

IGBT MOD TRENCH DUAL SOURCE SP6

APTGT225SK170G

Microsemi Corporation

IGBT 1700V 340A 1250W SP6

APTGT25X120T3G

Microsemi Corporation

IGBT MODULE TRENCH 3PH BRDG SP3