Product Introduction
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See Product Specifications
Product Specifications
Part Number |
IRF5806 |
Datasheet |
IRF5806 datasheet |
Description |
MOSFET P-CH 20V 4A 6-TSOP |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
86 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
11.4nC @ 4.5V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
594pF @ 15V |
FET Feature |
- |
Power Dissipation (Max) |
2W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
Micro6™(TSOP-6) |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
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