Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB65R380C6ATMA1
Part Number | IPB65R380C6ATMA1 |
Datasheet | IPB65R380C6ATMA1 datasheet |
Description | MOSFET N-CH 650V 10.6A TO263 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 3.2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 320µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²PAK (TO-263AB) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |