Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRL100HS121
Part Number | IRL100HS121 |
Datasheet | IRL100HS121 datasheet |
Description | MOSFET N-CH 100V 6PQFN |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 6.7A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 4.5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 11.5W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-PQFN (2x2) |
Package / Case | 6-VDFN Exposed Pad |