Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTK110N30
Part Number | IXTK110N30 |
Datasheet | IXTK110N30 datasheet |
Description | MOSFET N-CH 300V 110A TO-264 |
Manufacturer | IXYS |
Series | MegaMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 390nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7800pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 730W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-264 (IXTK) |
Package / Case | TO-264-3, TO-264AA |