Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BSC090N03LSGATMA1

Product Introduction

BSC090N03LSGATMA1

Part Number
BSC090N03LSGATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 30V 48A TDSON-8
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
5110pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number BSC090N03LSGATMA1
Datasheet BSC090N03LSGATMA1 datasheet
Description MOSFET N-CH 30V 48A TDSON-8
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN

Latest Products for Transistors - FETs, MOSFETs - Single

IRF7862TRPBF

Infineon Technologies

MOSFET N-CH 30V 21A 8-SOIC

IRF8113

Infineon Technologies

MOSFET N-CH 30V 17.2A 8-SOIC

IRF8113GPBF

Infineon Technologies

MOSFET N-CH 30V 17.2A 8-SO

IRF8113GTRPBF

Infineon Technologies

MOSFET N-CH 30V 17.2A 8-SOIC

IRF8113PBF

Infineon Technologies

MOSFET N-CH 30V 17.2A 8-SOIC

IRF8113TR

Infineon Technologies

MOSFET N-CH 30V 17.2A 8-SOIC