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| Part Number | IRLD120PBF | 
| Datasheet | IRLD120PBF datasheet | 
| Description | MOSFET N-CH 100V 1.3A 4-DIP | 
| Manufacturer | Vishay Siliconix | 
| Series | - | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 100V | 
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Ta) | 
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V | 
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 780mA, 5V | 
| Vgs(th) (Max) @ Id | 2V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V | 
| Vgs (Max) | ±10V | 
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V | 
| FET Feature | - | 
| Power Dissipation (Max) | 1.3W (Ta) | 
| Operating Temperature | -55°C ~ 175°C (TJ) | 
| Mounting Type | Through Hole | 
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP | 
| Package / Case | 4-DIP (0.300", 7.62mm) |