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Part Number | TK60P03M1,RQ(S |
Datasheet | TK60P03M1,RQ(S datasheet |
Description | MOSFET N-CH 30V 60A DPAK-3 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVI-H |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |