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Product Introduction

BSP296E6327

Part Number
BSP296E6327
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 100V 1.1A SOT223
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
SIPMOS®
Quantity
4676pcs Stock Available.

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Product Specifications

Part Number BSP296E6327
Datasheet BSP296E6327 datasheet
Description MOSFET N-CH 100V 1.1A SOT223
Manufacturer Infineon Technologies
Series SIPMOS®
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 700 mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id 1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 364pF @ 25V
FET Feature -
Power Dissipation (Max) 1.79W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA

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