Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STP18N60DM2
Part Number | STP18N60DM2 |
Datasheet | STP18N60DM2 datasheet |
Description | MOSFET N-CH 600V 12A |
Manufacturer | STMicroelectronics |
Series | MDmesh™ DM2 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 295 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 90W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |