Home / Products / Integrated Circuits (ICs) / Memory / HYB25D128800CE-6

Product Introduction

HYB25D128800CE-6

Part Number
HYB25D128800CE-6
Manufacturer/Brand
NXP USA Inc.
Description
IC RAM 4M PARALLEL 44TSOP II
Category
Memory
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
6512pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number HYB25D128800CE-6
Datasheet HYB25D128800CE-6 datasheet
Description IC RAM 4M PARALLEL 44TSOP II
Manufacturer NXP USA Inc.
Series -
Part Status Obsolete
Memory Type Non-Volatile
Memory Format RAM
Technology MRAM (Magnetoresistive RAM)
Memory Size 4Mb (256K x 16)
Clock Frequency -
Write Cycle Time - Word, Page 35ns
Access Time 35ns
Memory Interface Parallel
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II

Latest Products for Memory

BR25L020FVM-WTR

Rohm Semiconductor

IC EEPROM 2K SPI 5MHZ 8MSOP

BR25L040F-WE2

Rohm Semiconductor

IC EEPROM 4K SPI 5MHZ 8SOP

BR25L040FVJ-WE2

Rohm Semiconductor

IC EEPROM 4K SPI 5MHZ 8TSSOP

BR25L040FVM-WTR

Rohm Semiconductor

IC EEPROM 4K SPI 5MHZ 8MSOP

BR25L080F-WE2

Rohm Semiconductor

IC EEPROM 8K SPI 5MHZ 8SOP

BR25L160F-WE2

Rohm Semiconductor

IC EEPROM 16K SPI 5MHZ 8SOP