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Part Number | IPC302N10N3X1SA1 |
Description | MOSFET N-CH 100V 1A SAWN ON FOIL |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 1A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 302µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | Sawn on foil |
Package / Case | Die |