Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQ3419AEEV-T1_GE3
Part Number | SQ3419AEEV-T1_GE3 |
Datasheet | SQ3419AEEV-T1_GE3 datasheet |
Description | MOSFET P-CHANNEL 40V 6.9A 6TSOP |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 61 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 4.5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 975pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 5W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |