Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIUD412ED-T1-GE3
Part Number | SIUD412ED-T1-GE3 |
Datasheet | SIUD412ED-T1-GE3 datasheet |
Description | MOSFET N-CH 12V 500MA PWRPAK0806 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 500mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 340 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.71nC @ 4.5V |
Vgs (Max) | ±5V |
Input Capacitance (Ciss) (Max) @ Vds | 21pF @ 6V |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 0806 |
Package / Case | PowerPAK® 0806 |