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Product Introduction

SI2308BDS-T1-GE3

Part Number
SI2308BDS-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 60V 2.3A SOT23-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
69182pcs Stock Available.

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Product Specifications

Part Number SI2308BDS-T1-GE3
Datasheet SI2308BDS-T1-GE3 datasheet
Description MOSFET N-CH 60V 2.3A SOT23-3
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 156 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 30V
FET Feature -
Power Dissipation (Max) 1.09W (Ta), 1.66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3

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