Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANS2N3810L/TR
Part Number | JANS2N3810L/TR |
Datasheet | JANS2N3810L/TR datasheet |
Description | BJTS |
Manufacturer | Microsemi Corporation |
Series | Military, MIL-PRF-19500/336 |
Part Status | Active |
Transistor Type | 2 PNP (Dual) |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
Power - Max | 350mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-78-6 Metal Can |
Supplier Device Package | TO-78 |