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| Part Number | H7N1002LS-E | 
| Datasheet | H7N1002LS-E datasheet | 
| Description | MOSFET N-CH 100V LDPAK | 
| Manufacturer | Renesas Electronics America | 
| Series | - | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 100V | 
| Current - Continuous Drain (Id) @ 25°C | 75A (Ta) | 
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 37.5A, 10V | 
| Vgs(th) (Max) @ Id | - | 
| Gate Charge (Qg) (Max) @ Vgs | 155nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 9700pF @ 10V | 
| FET Feature | - | 
| Power Dissipation (Max) | 100W (Tc) | 
| Operating Temperature | 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | 4-LDPAK | 
| Package / Case | SC-83 |