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| Part Number | SIDC24D30SIC3 |
| Datasheet | SIDC24D30SIC3 datasheet |
| Description | DIODE SILICON 300V 10A WAFER |
| Manufacturer | Infineon Technologies |
| Series | - |
| Part Status | Discontinued at Digi-Key |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 300V |
| Current - Average Rectified (Io) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 200µA @ 300V |
| Capacitance @ Vr, F | 600pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 175°C |