Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / HGTD3N60C3S9A
Part Number | HGTD3N60C3S9A |
Datasheet | HGTD3N60C3S9A datasheet |
Description | IGBT 600V 6A 33W TO252AA |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
IGBT Type | - |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 6A |
Current - Collector Pulsed (Icm) | 24A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 3A |
Power - Max | 33W |
Switching Energy | 85µJ (on), 245µJ (off) |
Input Type | Standard |
Gate Charge | 10.8nC |
Td (on/off) @ 25°C | - |
Test Condition | 480V, 3A, 82 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-252AA |