Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / GPA030A135MN-FDR
Part Number | GPA030A135MN-FDR |
Datasheet | GPA030A135MN-FDR datasheet |
Description | IGBT 1350V 60A 329W TO3PN |
Manufacturer | Global Power Technologies Group |
Series | - |
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1350V |
Current - Collector (Ic) (Max) | 60A |
Current - Collector Pulsed (Icm) | 90A |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
Power - Max | 329W |
Switching Energy | 4.4mJ (on), 1.18mJ (off) |
Input Type | Standard |
Gate Charge | 300nC |
Td (on/off) @ 25°C | 30ns/145ns |
Test Condition | 600V, 30A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | 450ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-3 |
Supplier Device Package | TO-3PN |