Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTC143EMB,315
Part Number | PDTC143EMB,315 |
Datasheet | PDTC143EMB,315 datasheet |
Description | TRANS PREBIAS NPN 250MW 3DFN |
Manufacturer | Nexperia USA Inc. |
Series | - |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 230MHz |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 3-XFDFN |
Supplier Device Package | DFN1006B-3 |