Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SISS92DN-T1-GE3
Part Number | SISS92DN-T1-GE3 |
Description | MOSFET N-CH 250V POWERPAK 1212 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta), 12.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Rds On (Max) @ Id, Vgs | 173 mOhm @ 3.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 125V |
FET Feature | - |
Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8S |
Package / Case | PowerPAK® 1212-8S |