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Product Introduction

SIHH21N65E-T1-GE3

Part Number
SIHH21N65E-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 650V 20.3A PWRPAK8X8
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
52pcs Stock Available.

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Product Specifications

Part Number SIHH21N65E-T1-GE3
Datasheet SIHH21N65E-T1-GE3 datasheet
Description MOSFET N-CH 650V 20.3A PWRPAK8X8
Manufacturer Vishay Siliconix
Series -
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 99nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2404pF @ 100V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerTDFN

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