Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFN26N100P
Part Number | IXFN26N100P |
Datasheet | IXFN26N100P datasheet |
Description | MOSFET N-CH 1000V 23A SOT-227B |
Manufacturer | IXYS |
Series | Polar™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 390 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 6.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 197nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 11900pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 595W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227B |
Package / Case | SOT-227-4, miniBLOC |