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| Part Number | IPL60R210P6AUMA1 |
| Datasheet | IPL60R210P6AUMA1 datasheet |
| Description | MOSFET N-CH 600V 4VSON |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ P6 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 19.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 210 mOhm @ 7.6A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 630µA |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 151W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-VSON-4 |
| Package / Case | 4-PowerTSFN |