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| Part Number | IDB18E120ATMA1 |
| Datasheet | IDB18E120ATMA1 datasheet |
| Description | DIODE GEN PURP 1.2KV 31A TO263-3 |
| Manufacturer | Infineon Technologies |
| Series | - |
| Part Status | Obsolete |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200V |
| Current - Average Rectified (Io) | 31A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 2.15V @ 18A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 195ns |
| Current - Reverse Leakage @ Vr | 100µA @ 1200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3 |
| Operating Temperature - Junction | -55°C ~ 150°C |