Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPP048N12N3GXKSA1
Product Introduction
IPP048N12N3GXKSA1
- Part Number
- IPP048N12N3GXKSA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH 120V 100A TO220-3
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- OptiMOS™
- Quantity
- 1595pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IPP048N12N3GXKSA1 |
| Datasheet | IPP048N12N3GXKSA1 datasheet |
| Description | MOSFET N-CH 120V 100A TO220-3 |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 230µA |
| Gate Charge (Qg) (Max) @ Vgs | 182nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 60V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
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