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| Part Number | IPD09N03LA G |
| Datasheet | IPD09N03LA G datasheet |
| Description | MOSFET N-CH 25V 50A DPAK |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.6 mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1642pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |