
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / SG2013J-883B

| Part Number | SG2013J-883B |
| Datasheet | SG2013J-883B datasheet |
| Description | TRANS 7NPN DARL 50V 0.6A 16JDIP |
| Manufacturer | Microsemi Corporation |
| Series | - |
| Part Status | Active |
| Transistor Type | 7 NPN Darlington |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1.9V @ 600µA, 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 900 @ 500mA, 2V |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | - |
| Supplier Device Package | 16-CDIP |