Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BDP949H6327XTSA1
Part Number | BDP949H6327XTSA1 |
Datasheet | BDP949H6327XTSA1 datasheet |
Description | TRANS NPN 60V 3A SOT223 |
Manufacturer | Infineon Technologies |
Series | - |
Part Status | Last Time Buy |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 1V |
Power - Max | 5W |
Frequency - Transition | 100MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Supplier Device Package | PG-SOT223-4 |