Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / STGB15M65DF2
Part Number | STGB15M65DF2 |
Datasheet | STGB15M65DF2 datasheet |
Description | TRENCH GATE FIELD-STOP IGBT M SE |
Manufacturer | STMicroelectronics |
Series | - |
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 30A |
Current - Collector Pulsed (Icm) | 60A |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 15A |
Power - Max | 136W |
Switching Energy | 90µJ (on), 450µJ (off) |
Input Type | Standard |
Gate Charge | 45nC |
Td (on/off) @ 25°C | 24ns/93ns |
Test Condition | 400V, 15A, 12 Ohm, 15V |
Reverse Recovery Time (trr) | 142ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D2PAK |