Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / MMIX1G320N60B3
Part Number | MMIX1G320N60B3 |
Datasheet | MMIX1G320N60B3 datasheet |
Description | MOSFET N-CH |
Manufacturer | IXYS |
Series | GenX3™ |
Part Status | Active |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 400A |
Current - Collector Pulsed (Icm) | 1000A |
Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 100A |
Power - Max | 1000W |
Switching Energy | 2.7mJ (on), 5mJ (off) |
Input Type | Standard |
Gate Charge | 585nC |
Td (on/off) @ 25°C | 44ns/250ns |
Test Condition | 480V, 100A, 1 Ohm, 15V |
Reverse Recovery Time (trr) | 66ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 24-PowerSMD, 21 Leads |
Supplier Device Package | 24-SMPD |