Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STL19N60M2
Part Number | STL19N60M2 |
Datasheet | STL19N60M2 datasheet |
Description | MOSFET NCH 600V 11A POWERFLAT |
Manufacturer | STMicroelectronics |
Series | MDmesh™ M2 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21.5nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 791pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 90W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerFlat™ (8x8) HV |
Package / Case | 8-PowerVDFN |