Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / BUZ30AHXKSA1
Part Number | BUZ30AHXKSA1 |
Datasheet | BUZ30AHXKSA1 datasheet |
Description | MOSFET N-CH 200V 21A TO220-3 |
Manufacturer | Infineon Technologies |
Series | SIPMOS® |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 13.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |