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Product Introduction

SIR410DP-T1-GE3

Part Number
SIR410DP-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 20V 35A PPAK SO-8
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
18151pcs Stock Available.

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Product Specifications

Part Number SIR410DP-T1-GE3
Description MOSFET N-CH 20V 35A PPAK SO-8
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 10V
FET Feature -
Power Dissipation (Max) 4.2W (Ta), 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

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