Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / IMH21T110
Part Number | IMH21T110 |
Datasheet | IMH21T110 datasheet |
Description | TRANS PREBIAS DUAL NPN SMT6 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | 150MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SMT6 |